Day 1 :
Bhupendra N. Dev, Indian Institute of Technology, Kharagpur, India
Time : 9:30 - 10:15
Prof. Dev has completed his PhD from University at Albany, The State University of New York, USA and postdoctoral studies at DESY, Hamburg, Germany. He has supervised 21 Ph.D. theses and published about 160 papers in reputed journals. He has been serving as editorial board or advisory editorial board members of several international journals. He is a fellow of national academies of India.
The phenomenon of superconductivity was discovered over a century ago. So far more than half of the number of elements in the periodic table have shown superconductivity. Usually metals possessing strong long-range magnetic order, as in antiferromagnetism or ferromagnetism, do not exhibit superconductivity. This includes cobalt – a ferromagnetic transition metal. Recently, we discovered a high-density nonmagnetic (HDNM) fcc phase of Co in Co thin films [1,2]. As this phase of Co is nonmagnetic, it was logical to explore superconductivity in this HDNM phase of Co. We have indeed discovered superconductivity in these HDNM Co thin films with a superconducting transition temperature (Tc) of ~ 5 K. The transition to the superconducting state has been detected by four-probe measurements. Point-contact spectroscopy has provided a Tc value of ~ 9.5 K. The higher value of Tc obtained in point contact spectroscopy is apparently due to unavoidable pressure at the contact point. First-principles density functional theory calculations for this dense fcc phase of Co show that this phase is nonmagnetic, characterized by zero elementary moment, and the estimated TC within the BCS theory is 0.30 K. A volume preserving strain in fcc Co is shown to result in anomalous softening of zone boundary phonons which couple strongly with electrons, and stabilize superconductivity at a relatively high temperature (>5 K) . The value of TC can indeed be higher for other strain conditions. That the superconding Co layer (~ 4 nm) is in contact with a ferromagnetic Co layer (18 nm) indicates its potential application in the area of quantum information.
 Nasrin Banu, S. Singh, B. Satpati, A. Roy, S. Basu, P. Chakraborty, H. C. P. Movva, V. Lauter and B. N. Dev, Sci. Rep. 7, 41856 (2017).  Nasrin Banu, B. N. Dev et al., Nanotechnology 29, 195703 (2018).  Nasrin Banu, B. N. Dev et. al., arXiv:1710.06114
Tetsuya YAMAMOTO, Kochi University of Technology, KOCHI , JAPAN
Keynote: Unique interfacce layer to tailor the cystallographic orientation, surface morphology and carrier transport of highly n-type-doped ZnO polycrystalline films on glass substrates
Time : 10:15-11:00
Tetsuya Yamamoto obtainedd a Ph.D. degree in theoretical condensed matter physics from Osaka University in 1997 and has been a professor of Kochi University of Technology since 2001. His area of expertise is in the film growth, the development of film growth apparatus, characterization, first-principles calculation and condensed matter physics theory of wideband-gap semiconductors such as GaN, ZnO and In2O3. He has been the supervisor of many national projects in Japan. He won the prize by the Ministry of Education, Culture, Sports, Science and Technology for his work on ZnO-based transparent conductive oxides films for optoelectronic devices in 2011.
We have been developing a unique deposition method together with a growth process to achieve tailor-made properties, such as carrier concentration (Ne) and Hall mobility (mH), of degenerate n- type-doped wide-bandgap oxide films prepared on amorphous glass substrates. We, very recently, reported that 500-nm-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al- doped ZnO (AZO) polycrystalline films deposited on 10-nm-thick Ga-doped ZnO (GZO) polycrystalline films exhibited a high mH of 50.1 cm2/Vs with a Ne of 2.55 × 1020 cm−3. The film growth process was a substrate temperature as low as 200 ºC with no post-heat-annealing process. Firstly, the very thin GZO films were prepared on glass substrates by ion plating with dc arc discharge, which has been developed by our group, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with a well-defined (0001) orientation and a flat surface, whereas AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, resulting in very rough surfaces, to exhibit a low mH of 38.7 cm2/Vs with a Ne of 2.22 × 1020 cm−3. The key point is to reduce a contribution of grain boundary scattering to the carrier transport due to the drastically improved crystallographic orientation and alignment between columns. Our results indicate that high mH polycrystalline oxide films possess rather unique equiaxed columnar grain structure, which enriches our current knowledge of ultimate carrier transport.
Sushanta K. Mitra, University of Waterloo, CANADA
Keynote: Waterloo Institute for Nanotechnology (WIN): Solving global challenges by bridging across the length scales
Time : 11:15 - 12:00
Sushanta Mitra is the Executive Director of WIN and a professor in Mechanical and Mechatronics Engineering and also cross-appointed in the Department of Physics and Astronomy at the University of Waterloo. For his contributions in engineering and sciences, he has been elected as the Fellow of the American Society of Mechanical Engineers (ASME), the Canadian Society for Mechanical Engineering (CSME), the Engineering Institute of Canada (EIC), the Canadian Academy for Engineering (CAE), the Royal Society of Chemistry (RSC, UK), the American Physical Society (APS), the Indian National Academy of Engineering (INAE – Foreign Fellow), and the American Association for the Advancement of Science (AAAS).
WIN, with its 86 faculty members, is the global centre of excellence in nanoscience and nanotechnology. The unique feature about WIN is its ability to bridge the entire length scale from Å – mm and solve key challenges in terms of energy, water, and public health. At the atomic scale, researchers are exploiting the quantum phenomena, followed by harnessing the advantages of two-dimensional materials like graphene and developing new nanomaterials with tunable functional properties. This enables researchers to build nano-meter scale molecular machines. Such bottom-up approach in materials research and their fundamental understanding lead to development of new micro-sensors based on NEMS/MEMS technology. By integrating ICT platform, real-world devices are built, which range from integrated sensors to wearable gadgets. Currently, there is also a significant endeavor in utilizing machine learning and artificial intelligence coupled with Internet-of-Things for nanotechnology. WIN has charted its new mission in bolstering its four thematic areas – Smart and Functional Materials; Connected Devices; Next Generation Energy Systems; and Theranostics and Therapeutics. The discoveries by WIN scientists and engineers are fundamentally changing our world and helping solve some of humanities most pressing issues and at the same time driving Industry 4.0 agenda.